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H5P2 ... THIRD QUESTION wat does this question want ?? i tried with various equations but dint work ?? need discussion !!

MIT 6.002 Circuits and Electronics, Spring 2007
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do i have to substitute Vin=Vt initially and then continue solving ??
https://6002x.mitx.mit.edu/wiki/view/HW5solution/
is this the formula from the link (RS*K*(vIN-VT)+1-1sqrt((K*(vIN-VT)*RS+1)^2-K)) ? It's not shown all of it...

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I tried with this - (RS*K*(vIN-VT)+1-sqrt((K*(vIN-VT)*RS+1)^2-K)) but doesn't work
(RS*K*(vIN-VT)+1-sqrt((K*(vIN-VT)*RS+1)^2-K^2*RS^2*(vIN-VT)^2))/(K*RS^2)
ohhh I saw only the half of it :) THX
your welcome im just about to start hw6 and every answer must be submited in a algabreic equation
(RS*K*(vIN-VT)+1-sqrt((K*(vIN-VT)*RS+1)^2-K^2*RS^2*(vIN-VT)^2))/(K*RS^2)
Here the source labeled VDD is the power supply. Although the source follower has no voltage gain (actually a small loss) it has power gain: it presents a very high resistance to the signal source so it takes no power from the source, but it can drive a low resistance load. Also, because of feedback, which we will learn about later, the source follower is close to linear. In this problem we will investigate the large-signal characteristics of a source follower. As usual, the MOSFET is set up to operate in the saturated region. Write an algebraic expression for iDS in terms of K, vIN, vOUT, and VT. Remember, algebraic expressions are case sensitive.
Write an algebraic expression for iDS in terms of K, vIN, vOUT, and VT.
pls some one help me out???

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