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hejå

  • 3 years ago

Assuming that the NewFET is biased into its active region, derive expressions for the small-signal-model parameters gm and ro in terms of the large-signal model parameters K and VT and the bias voltages VGS and VDS. Transconductance gm =

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  1. Nurali
    • 3 years ago
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    K*VDS^2

  2. hejå
    • 3 years ago
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    i have ro as this but it doesnt accept it\[1/(2*K*VDS*(Vgs-VT))\]

  3. Nurali
    • 3 years ago
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    1/(2*K*VDS*(VGS-VT ))

  4. Nurali
    • 3 years ago
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    copy it and reply if correct or not.

  5. andrew.winney
    • 3 years ago
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    can you tell how you got ro???

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