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andrew.winney

  • 3 years ago

Assuming that the NewFET is biased into its active region, derive expressions for the small-signal-model parameters gm and ro in terms of the large-signal model parameters K and VT and the bias voltages VGS and VDS. Transconductance gm =

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  1. 1431mahi
    • 3 years ago
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    K*VDS^2

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