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andrew.winney

  • 3 years ago

Assuming that the NewFET is biased into its active region, derive expressions for the small-signal-model parameters gm and ro in terms of the large-signal model parameters K and VT and the bias voltages VGS and VDS. Transconductance gm =

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  1. akash97
    • 3 years ago
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    @andrew.winney:( K *VDS*VDS)

  2. brunofornari
    • 3 years ago
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    The rest of H6P1: THE NEWFET DEVICE??

  3. ppich
    • 3 years ago
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    Have any know: Output resistance ro

  4. brunofornari
    • 3 years ago
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    1/(2*K*VDS*(VGS-VT ))

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