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Assuming that the NewFET is biased into its active region, derive expressions for the smallsignalmodel parameters gm and ro in terms of the largesignal model parameters K and VT and the bias voltages VGS and VDS.
Transconductance gm =
 one year ago
 one year ago
Assuming that the NewFET is biased into its active region, derive expressions for the smallsignalmodel parameters gm and ro in terms of the largesignal model parameters K and VT and the bias voltages VGS and VDS. Transconductance gm =
 one year ago
 one year ago

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akash97Best ResponseYou've already chosen the best response.0
@andrew.winney:( K *VDS*VDS)
 one year ago

brunofornariBest ResponseYou've already chosen the best response.0
The rest of H6P1: THE NEWFET DEVICE??
 one year ago

ppichBest ResponseYou've already chosen the best response.0
Have any know: Output resistance ro
 one year ago

brunofornariBest ResponseYou've already chosen the best response.0
1/(2*K*VDS*(VGSVT ))
 one year ago
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