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hejå

  • 2 years ago

The drain of Q1 is still high and the gate of Q2 is at VOL. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to charge the gate capacitance of Q2 to VOH? incorrect Note: In fact, the SR model is not very accurate for Q3 in this circuit because Q3 is in saturation, but use the SR model anyway, for simplicity. Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?

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  1. Nurali
    • 2 years ago
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    tell me all value.

  2. hejå
    • 2 years ago
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    VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gate-source capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=95.0MΩ and RPU=18.0kΩ.

  3. Nurali
    • 2 years ago
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    tell me H8P3 1,2 and 3 answer

  4. hejå
    • 2 years ago
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    185,347 5 4

  5. Nurali
    • 2 years ago
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    62 ps 29.9 ps

  6. Nurali
    • 2 years ago
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    if correct please click best response

  7. hejå
    • 2 years ago
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    62 is wrong

  8. Nurali
    • 2 years ago
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    56 to 75 ps try

  9. kaddy
    • 2 years ago
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    @NURALI CAN U LEMME KNO MY ANSWER We assume an "ancient" 1μm technology satisfying the static discipline: VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gate-source capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=115.0MΩ and RPU=10.0kΩ.

  10. jasj23
    • 2 years ago
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    62 and 35

  11. brunofornari
    • 2 years ago
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    We assume an "ancient" 1μm technology satisfying the static discipline: VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gate-source capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=110.0MΩ and RPU=16.0kΩ.

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