anonymous
  • anonymous
The drain of Q1 is still high and the gate of Q2 is at VOL. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to charge the gate capacitance of Q2 to VOH? incorrect Note: In fact, the SR model is not very accurate for Q3 in this circuit because Q3 is in saturation, but use the SR model anyway, for simplicity. Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?
MIT 6.002 Circuits and Electronics, Spring 2007
  • Stacey Warren - Expert brainly.com
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SOLVED
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chestercat
  • chestercat
I got my questions answered at brainly.com in under 10 minutes. Go to brainly.com now for free help!
Nurali
  • Nurali
tell me all value.
anonymous
  • anonymous
VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gate-source capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=95.0MΩ and RPU=18.0kΩ.
Nurali
  • Nurali
tell me H8P3 1,2 and 3 answer

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anonymous
  • anonymous
185,347 5 4
Nurali
  • Nurali
62 ps 29.9 ps
Nurali
  • Nurali
if correct please click best response
anonymous
  • anonymous
62 is wrong
Nurali
  • Nurali
56 to 75 ps try
anonymous
  • anonymous
@NURALI CAN U LEMME KNO MY ANSWER We assume an "ancient" 1μm technology satisfying the static discipline: VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gate-source capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=115.0MΩ and RPU=10.0kΩ.
anonymous
  • anonymous
62 and 35
anonymous
  • anonymous
We assume an "ancient" 1μm technology satisfying the static discipline: VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gate-source capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=110.0MΩ and RPU=16.0kΩ.

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