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The drain of Q1 is still high and the gate of Q2 is at VOL. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to charge the gate capacitance of Q2 to VOH?
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Note: In fact, the SR model is not very accurate for Q3 in this circuit because Q3 is in saturation, but use the SR model anyway, for simplicity.
Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?
 one year ago
 one year ago
The drain of Q1 is still high and the gate of Q2 is at VOL. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to charge the gate capacitance of Q2 to VOH? incorrect Note: In fact, the SR model is not very accurate for Q3 in this circuit because Q3 is in saturation, but use the SR model anyway, for simplicity. Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?
 one year ago
 one year ago

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hejåBest ResponseYou've already chosen the best response.1
VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gatesource capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=95.0MΩ and RPU=18.0kΩ.
 one year ago

NuraliBest ResponseYou've already chosen the best response.0
tell me H8P3 1,2 and 3 answer
 one year ago

NuraliBest ResponseYou've already chosen the best response.0
if correct please click best response
 one year ago

kaddyBest ResponseYou've already chosen the best response.0
@NURALI CAN U LEMME KNO MY ANSWER We assume an "ancient" 1μm technology satisfying the static discipline: VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gatesource capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=115.0MΩ and RPU=10.0kΩ.
 one year ago

brunofornariBest ResponseYou've already chosen the best response.0
We assume an "ancient" 1μm technology satisfying the static discipline: VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gatesource capacitance CGS=3.5fF and VT=1.0V. RON=2150.0Ω, ROFF=110.0MΩ and RPU=16.0kΩ.
 one year ago
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