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EliteTUM
MIDTERM A linear circuit is shown below. Pic: http://i45.tinypic.com/206flvd.png The elements in this circuit have the following values: R1=200Ω, R2=200Ω, R3=100Ω, V1=5V, I1=0.001A and I2=0.005A Determine the potentials at nodes A and B, assuming a ground node as shown in the figure. (a) What is the value of voltage vA in Volts? (b) What is the value of voltage vB in Volts? Now let us determine if the answers you came up with satisfy the laws of physics. What is the power (in Watts) dissipated in resistor R1? What is the power (in Watts) dissipated in resistor R2?
What is the power (in Watts) dissipated in resistor R3? What is the power (in Watts) coming out of the voltage source V1? What is the power (in Watts) coming out of the current source I1? What is the power (in Watts) coming out of the current source I2?
MIDTERM 2 For many purposes of gate design, we can model a MOSFET used as a switch simply as as an ideal switch and an "on-state resistor" RON. This is the SR model. Assuming this model for the MOSFET, consider the inverter in the figure. This inverter is intended to be used as an element in a logic family with NAND and NOR gates. Pic: http://i50.tinypic.com/4kgxf9.png The static discipline required for this family is: VS=5.0V, VOH=4.5V, VIH=4.0V, VIL=1.5V, VOL=1.0V. What is the low noise margin (in Volts)? What is the high noise margin (in Volts)? What is the width of the forbidden region (in Volts)? Suppose that the threshold voltage for the MOSFET is VT=2.0V and RON=19000.0Ω. What is the minimum value of the pullup resistor RPuI (in Ohms) for which this inverter can obey the required static discipline? Now, consider the NAND gate of this family. What is the minimum value of the pullup resistor RPuA (in Ohms) for which this inverter can obey the required static discipline? How about the NOR gate of this family. What is the minimum value of the pullup resistor RPuO (in Ohms) for which this inverter can obey the required static discipline? Assume that we implemented this family with the minimum pullup resistors that you have already calculated. What is the maximum power (in Watts) consumed by the inverter? What is the maximum power (in Watts) consumed by the NAND? What is the maximum power (in Watts) consumed by the NOR?
MIDTERM 3 A nonlinear device Z has the i-v relationship shown below. Pic: http://i50.tinypic.com/e9vgp5.png This device is used in the circuit shown below, where "I" is the value of the current source. Pic: http://i49.tinypic.com/2zs741c.png Assuming that I=10A, what is the value of the voltage vo (in Volts)? Now assuming that I=−3A, what is the value of the voltage vo (in Volts)? Finally, for the last two parts assume that I=5A. What is the value of the voltage vo (in Volts)? What is the value of the voltage v1 (in Volts)?
MIDTERM 4 A startup company TransGadget has invented a new type of MOS-gated transistor called ExtremeT. The symbol for ExtremeT and its terminal voltage-current characteristics are given below: Pic: http://i50.tinypic.com/2lc0n05.png TransGadget wants to determine the usefulness of their invention by examining the large-signal input-output characteristics of two amplifiers built using ExtremeT. They hire you to figure this out. First a source follower amplifier is built using ExtremeT, as shown below. Pic: http://i47.tinypic.com/211nj9y.png What is the expression for vOUT in terms of vIN, R, and b when vIN is greater than 0V? ExtremeT is now used to build a different type of amplifier which uses two transistors as shown below. Pic: http://i50.tinypic.com/rmmn4g.png What is the expression for vOUT in terms of vIN, VS, R, and b for this amplifier when vIN is greater than 0V?
MIDTERM 5 The startup company TransGadget has also invented a MOS-gated transistor called SuperT, with the symbol and terminal voltage-current characteristics given below. Pic: http://i45.tinypic.com/2sacjs8.png Engineers of TransGadget build a common source amplifier using SuperT as shown below. Pic: http://i47.tinypic.com/xpa7hd.png Here, VS=80V, R=1.5kΩ, and the transistor parameter f=2mAV3. The amplifier is biased with VIN=2V. What is the dc operating point (bias) output voltage VOUT (in Volts) of this amplifier? What is the small signal gain (vOUT/vIN) of this amplifier when it is biased as above?
PICTURES TO MIDTERM 4 Pic 1: http://i48.tinypic.com/v46lxf.png Pic 2: http://i50.tinypic.com/2lc0n05.png Pic 3: http://i50.tinypic.com/rmmn4g.png
MIDTERM 6 The circuit below contains two dependent sources: a voltage controlled voltage source and a voltage controlled current source. Pic: http://i47.tinypic.com/71oj03.png The circuit elements have the following values: Vin=42V, R1=4Ω, R2=4Ω, R3=7Ω, A=1.5 and B=0.125. What is the value of the current i1 (in Amps)? What is the value of the output voltage vOUT (in Volts)? We wish to create a Thevenin equivalent model of the above shown circuit as seen from its Output Port. What is the value of the Thevenin equivalent voltage as seen from the Output Port (in Volts)? What is the value of the Thevenin equivalent resistance (in Ohms) as seen from the Output Port?
I'll try solving most of it myself and on request post my answers. If anyone is up to joining me,you're welcome to do so and thanks in advance :)
every one post the answers you get here ill be adding sum when im done iswell
pls check this if it is correct 1)va=2.84v 2)vb=0.68v
HEy @jayapavan what are the other values u got????
solved the first question complete
the values for everyone will be different so give the final answer in terms of different parameters and then just substitute the values
@saadixyz formulas plzz
midterm2 What is the low noise margin (in Volts)? VIL-VOL=0.5 What is the high noise margin (in Volts)? VOH-VIH=0.5 What is the width of the forbidden region (in Volts)? VIH-VIL=2.5
@lucky12345 , The midterm 2 question absolutely same as the question that was given in Homework 3 named as "H3P1: A Logic Family "
ya but there are some additional parts give answers to question in the i hav given it will be much simpler for everyone to understand
@saadixyz , which program ?
mid term 2 Vout=Vs*RON/(RON+RPULLUP). Vout is lower than VOL rpull= 4*r0n for inverter , nor rpull= 4*r0n for nand
@saadixyz which program you used
@lucky12345 , Bro , midterm 2 is same as homework question.
midterm 1 answers?? plz give the formula of the answer
q2 last 6 six questions answers plz
@saadixyz : wat r d ans for last 3 que of MIDTERM 1????? or formula?????
q1:r1=50,r2=50,r3=100,v1=4,i1=0.0001,i2=0.001 answers 2.9775 1.955 0.0209 0.0211 0.038 0.078 0.000195 -0.00195
my values for question one are this any help The elements in this circuit have the following values: R1=1000Ω, R2=400Ω, R3=600Ω, V1=6V, I1=2A and I2=2A
@hejå: dan dis ans ll not work 4 u.......
q2:vs=5,voh=4.5,vih=4,vil=1.5,vol=1 0.5 0.5 2.5 44000 88000 44000 4.45e-4 2.27e-4 5.05e-4
@rvamsi: can u tell me how did u get ans of last 3 que of Q1???????
@rvamsi Vt=? Ron=?
q3: 1.) i=8,vo=2 2.) i=-3,vo=-1 3.)&4.) i=3 1 2
@rvamsi : tell me d formulas
good work but @rvamsi tell me the formulae 4 all u r answers
@rvamsi , kindly post the formula/expression as the values are different :-/
@machu , Thanks ! But kindly post the formulas as the values are different. If you will post the formula, everyone will be able to solve it
@machu plz help r1=r2=100,r2=200,i1=0.01,i2 0.001
@chanakya2346 : 2.84 , 1.64 , 0.023 , 0.023 , 0.004624 last 3 still remain unsolved
@akash97 do u know the formulae for the last 3 question of mid 1
q3: replace the zener diode with a resistor and find voltage across it
@rvamsi : tell me da formulas for MIDTERM Q1 nly
plz post the aswers in terms of formula not the final answer in terms of values
@akash97 the ans u have told was wrng
@chanakya2346 : wch 1???????/ Ma ans r marked r8........
@rvamsi question 2 plz
Suppose that the threshold voltage for the MOSFET is VT=2.0V and RON=10000.0Ω. What is the minimum value of the pullup resistor RPuI (in Ohms) for which this inverter can obey the required static discipline?
@akash my values are r1=r2=100,r3=200,i1=0.01,i2 0.001.....wat's u r's
@chanakya2346 : sorry .ma values r r1=r2=200 & r3=100
@akash97 if you know the formulae plz tell me
Please , tell the formulas ....
dude tell me the values i'll tell the answer
and tell me the formulae for question 2
@saadixyz , yaar see ! if you will post only the answers not everyone will able to solve it so therefore kindly post the formula so that everyone can solve it :)
@chanakya2346 : power in R1= (vs - va)^2 / r1......... : power in R2= ( va- vb)^2 / r2 ......
@saadixyz r1=r2=100,r3=200,i1=0.01,i2= 0.001
@saadixyz , The midterm 2 question absolutely same as the question that was given in Homework 3 named as "H3P1: A Logic Family " .
@saadixyz : r1=r2=200 & r3=100 I1= 0.001 i2 = 0.005 tell me d formulas for last 3 que of MIDTERM 1
@akash97 , this is what I am continuously saying that someone should post the formulas :-/
@chaand.i : i DID IT MAN nw
@chaand.i the values are changed
@saadixyz , yeah ... but the way of solving is same as it was in homework 3 !
@akash97 , congrats dude :) ... what are the formulas you used in all the parts of QUESTION 1 ?
@chaand.i can u refer me somewhere
can someone put the final answer of question 1 (formula) akash97
@saadixyz , okay give me a moment ! I'll try to post the formulas
@chaand.i : I post 2 formulas for que 4 5 ... que 6 is easy bt I dont know formulas for que 7 8 9.DO u know ?
@akash97 , No I am stucked in question 1 as well :/
@chaand.i : use CIRCUIT SANDBOX & use DC analysis to get ans. Everytime pen doent work. Sometimes CPU works better.: ) I have send u a msj.reply it fast
@akash97 tell me your question????
@akash97 , okay thanks ! Let me find the software and then i ll let you know
Suppose that the threshold voltage for the MOSFET is VT=2.0V and RON=10000.0Ω. What is the minimum value of the pullup resistor RPuI (in Ohms) for which this inverter can obey the required static discipline?
@saadixyz : r1=r2=100,r3=200,i1=0.001,i2= 0.005.dan 1) What is the power (in Watts) coming out of the voltage source \(V_1\)? 2)What is the power (in Watts) coming out of the current source \(I_1\)? 3)What is the power (in Watts) coming out of the current source \(I_2\)?
befor posting the answer plz write the question and then the answer
these are in order of as asked
1 & 3rd r marked awrng @saadixyz
@akash97 what?? i dont understand
@saadixyz : from 3 ans u given me , 1st ans & 3rd ans r wrong
@hejå Vout=1 , so first calculate vs * RON which is 5* 10000 =50000 10,000 + RPUL =50,000 RPUL = 50,000-10,000=40,000
@saadixyz : 1st ans may b r8 since I made mistake while writing dat 1
@akash97 0.0725 first answer
Assume that we implemented this family with the minimum pullup resistors that you have already calculated. What is the maximum power (in Watts) consumed by the inverter? incorrect What is the maximum power (in Watts) consumed by the NAND? incorrect What is the maximum power (in Watts) consumed by the NOR?
check tell and give medal
@akash97 0.0105 check and give medal and sorry for the wrong answers
0.0105 FOR WCH que????????????
@akash97 so it checked out
@saadixyz : still ans r wrng...........
the power across voltage and i2
@akash97 dude mail me your circuit and values
@saadixyz plz give the formulas used in question 1 nt the final value that you are getting we all hav different values
any one need help in q2
@chanakya2346 plz give the formula used in q1,q3
@lucky12345 i havent completed mid 1 mid 3 ......i have completed only mid2
k wen u complete it plz tell the answers :-)
@lucky12345 for sure
@chanakya2346 plz help me with q 2
hey can u plz tell the answer for q3 3rd and the 4th part?
question 1 formulae plz
sSuppose that the threshold voltage for the MOSFET is VT=2.0V and RON=6000.0Ω. What is the minimum value of the pullup resistor RPuI (in Ohms) for which this inverter can obey the required static discipline?
plz give the answer of the questions in the way i hav given its becoming realy difficult to find the answer otherwise
plz give the ans for q3....
@saadixyz rpullup in ur case is 24000 (nor,not gate) and 48000 (nand)
2 equations for Q4
@lucky12345 and the powers
put the corresponding values in the answers i provided
Q1 power across V1=V1*current across V1(dis u get using circuit sandbox) power across I1=Vb*I1 power across I2=Vb*I2
@lucky12345 check your answers what is that 2.613 multiplyed
2.613 is the final answer i got for my midterm q2 u just use the formula
plz any one completed midterm 4
The static discipline required for this family is: VS=5.0V, VOH=4.5V, VIH=4.0V, VIL=1.5V, VOL=1.0V. What is the low noise margin (in Volts)? correct What is the high noise margin (in Volts)? correct What is the width of the forbidden region (in Volts)? correct Suppose that the threshold voltage for the MOSFET is VT=2.0V and RON=10000.0Ω. What is the minimum value of the pullup resistor RPuI (in Ohms) for which this inverter can obey the required static discipline? incorrect Now, consider the NAND gate of this family. What is the minimum value of the pullup resistor RPuA (in Ohms) for which this inverter can obey the required static discipline? incorrect How about the NOR gate of this family. What is the minimum value of the pullup resistor RPuO (in Ohms) for which this inverter can obey the required static discipline? incorrect Assume that we implemented this family with the minimum pullup resistors that you have already calculated. What is the maximum power (in Watts) consumed by the inverter? incorrect What is the maximum power (in Watts) consumed by the NAND? incorrect What is the maximum power (in Watts) consumed by the NOR? some one help i always help people here lol
@hejå see closed questions for answers
equations 4 mid term 4 plz any one
can any one help me with nand
@Nurali can u pls lemme kno d formula for question number 4
mid term question4 equations any one plz plz help............
@heja 1. 40000 2. 80000 3. 40000 4. 0.0005 5. 0.00025 6. 0.00055
@heja for nand gate power is Vs^2/(Rpul+2Ron)
thanks for help i had the answer 0.00025 alrdy but it was my final check and it didnt feel right haha
Q1) What is the power (in Watts) coming out of the voltage source V1? i used this (V1*current across V1) and give -0.04 but it is wrong any help
@Nurali help me wid que 4 pls
equations for question number 4 please ???
please help me question 3 A nonlinear device Z has the i-v relationship shown below. This device is used in the circuit shown below, where "I" is the value of the current source. 1. Assuming that I=10A, what is the value of the voltage vo (in Volts)? 2. Now assuming that I=−3A, what is the value of the voltage vo (in Volts)? Finally, for the last two parts assume that I=5A. 3. What is the value of the voltage vo (in Volts)? 4. What is the value of the voltage v1 (in Volts)?
@Nurali : 1) 2 2)-1 3)1.66 4)3.33 jz replace device by zener diode
@Nurali : click on best response if u got ans
@chanakya2346 Q4 (R*b)/(1+R*b)*vIN (VS*(1+R*b)-vIN)/(1+R*b)
@Nurali click on best response if find answer helpful
@kaddy so what are the answers
what are the formulas for question 3
@kaddy : do you know ans of Q5??????????
Finally, for the last two parts assume that I=1A. What is the value of the voltage vo (in Volts)? incorrect What is the value of the voltage v1 (in Volts)?
@akash97 trying out...i ll post 1ce i arrive at the answer :)
@saadixyz which answer???
please help me with q5 and q6..
q5: 1.) VS-(R*iD) iD=f*(VIN)^3
@rvamsi for gain wats d formula pls??
@kaddy -3*f*(vgs^2)*RL
@kaddy no mention (any way thanx 4 the medal)
did any one the last one of q6
@rvamsi ; DID U GET any one ans of Q6????
@rvamsi have u done with q6
plz give formulae for q6
q6 vin=18,r1=1.5,r2=3,r3=4,A=1.5,B=0.5 1.)1.8 2.)1.8 3.)1.8 4.).......?
formula plz or (Vin=42V, R1=4Ω, R2=4Ω, R3=7Ω, A=1.5 and B=0.125. )
@rvamsi : tell us formulas
tell us formula@rvamsi
@rvamsi wats d last answer? pls lemme kno
hey!!!1 plz tell the answer for q6 with parameters Vin=45V, R1=1.5Ω, R2=2Ω, R3=6Ω, A=2 and B=0.5
Vo* (R3-(B*R1*R3)+R1+R2+A*R2)/(R3-B*R1*R3)=VIN
Vo is output voltage only no?....
RTH PLZZZZZZZZZZZZZZZZ
q1:r1=200,r2=200,r3=100,v1=5,i1=0.001,i2=0.005 plzzzzz can anyone helpp me? i need power over r1,r3 and i1 thx i ll give a medal
r1,r3 and il only? @graydarl
yup, i have the rest of them
Thank you very much i ll give a medal
Vin=45V, R1=1.5Ω, R2=2Ω, R3=6Ω, A=2 and B=0.5 value of rth in q6 please please
@machu yes just the power for r1,r3 and i1 (q1) thank you very much i ll give u a medal if u can help me
power dissipated thru r1= 0.02333 power dissipated thru r3= 0.00462 third one answer is power dissipated thru i1= 1 milli ampere * 680 milliwatt......i'll get the value in a min
@machu i'll wait thank you very much
@mostafa.ibrahim q3: 1.) i=8,vo=2 2.) i=-3,vo=-1 3.)&4.) i=3 1 2
power dissipated thru r1= 0.02333 power dissipated thru r3= 0.00462 third one answer is 0.68 @graydarl
@machu 0.00068 was for the third but thank you very much
(q2) VS=5.0V, VOH=4.5V, VIH=4.0V, VIL=1.5V, VOL=1.0V. can someone help me with this please?
oh sorry i forgot milli volts!was tired! glad u got it right
pls giv me the formula for Q1 and Q3 i will giv a medal pls help
Please explain Q1 formula
(q3) I=10A, I=−3A,I=1A. plzzzzzzzzzz help
@graydarl 2 -1 0.33333 0.66666
@lucky12345 Thank you very much bro
@mostafa.ibrahim Vout = 60 Gain = -60
thanks u bro @pauliusn
q(5) when vs=100, r=1kohm , f=1 ma/v^3, vin=4v (1)what is th dc bais VOUT? (2)gain(vout/vin) plzzzz help
@graydarl Vout = 36 Gain = -48
Thank you very much @pauliusn
(q6) The circuit elements have the following values: Vin=27V, R1=5Ω, R2=7Ω, R3=12Ω, A=6 and B=0.1. plzzzzzzzz help
Solution for Q1: vA = (R2*V1 + R3*V1 + I1*R1*R3 - I2*R1*R3)/(R1 + R2 + R3) vB = (R3*(V1 + I1*R1 + I1*R2 - I2*R1 - I2*R2))/(R1 + R2 + R3) P_R1 = (vA-V1)^2/R1 P_R2 = (vA-vB)^2/R2 P_R3 = vB^2/R3 P_V1 = V1 * (V1-vA)/R1 P_I1 = V1 * I1 P_I2 = V1* (-I2)
Solution for q2 VS=5.0 VOH=4.5 VIH=4.0 VIL=1.5 VOL=1.0 The low noise margin is defined as VIL−VOL. For this problem, it is 0.5V. As an example, if an inverter outputs a valid voltage signal of 1.0V (VOL) to another inverter, then that signal can rise by 0.5V all the way to VIL, before it becomes an invalid logical 0 input to the second inverter. The high noise margin is defined as VOH−VIH. For this problem, it is 0.5V. Again, if an inverter outputs a valid voltage signal of 4.5V(VOH) to another inverter, then that signal can fall by 0.5V, all the way to VIH before it becomes an invalid logical 1 input to the second inverter. The width of the forbidden region is defined as VIH−VIL. For this problem, it is 2.5V. Valid inputs to our logic family are not allowed to fall between VIH and VIL. When VGS for the MOSFET is below VT, the MOSFET behaves like an open circuit, and iDS=0. That means no voltage drops over RPUI and the output voltage of our inverter is VS, so this case is fine with out static discipline, since the output voltage is above VOH. For VGS≥VT, the MOSFET is on and behaves like a resistor with resistance RON with our model. To find RPUI: VOL=VS(RON)RON+RPUI 1=5(12000.0)(12000.0+RPUI)→RPUI=48000.0Ω Similar to the inverter case, when either MOSFET is off, no current can flow through the pullup resistor because the MOSFETs and pullup resistor are in series. So VOUT for the NAND gate is simply VS when either MOSFET is off. When both MOSFETs are on, they behave like resistors with resistance RON. The two MOSFETs are in series, so we calculate: To find RPUA: VOL=VS(2RON)2RON+RPUA 1=5(24000.0)(24000.0+RPUA)→RPUA=96000.0Ω When both MOSFETs are off, VOUT for the NOR gate is simply VS because no current can flow through either MOSFET or RPUO. When one MOSFET is on, VOUT is: VS⋅(0.5)RON(0.5)RON+RPUO because the MOSFETs are in parallel with each other. For the cases with one MOSFET on or both MOSFETs on, VOUT must be at least as small as VOL. For the case with one MOSFET on, RPUO must be at least 48000.0 Ω. For the case with both MOSFETs on, RPUO must be at least 24000.0 Ω. So for our NOR gate to satisfy the static discipline, RPUO must be at least 48000.0 Ω. When the MOSFET in the inverter is off, no power is consumed because no current can flow as the MOSFET behaves like an open circuit. When it is on, VS must drop over RPUI and RON, so the power consumed is: (VS)2RPUI+RON Power consumed by inverter: 25V12000.0+48000.0Ω=0.000417W When either MOSFET is off, no current flows through the MOSFETs or RPUA, so there is no power consumed. When both MOSFETs are on, VS must drop over RPUA and 2RON because the MOSFETs are in series with each other. The power consumed in this case is: (VS)2RPUA+2RON Power consumed by NAND: 25V2⋅12000.0+96000.0Ω=0.000208W When both MOSFETs are off, no curernt can flow, so no power is consumed. When one MOSFET is on, VS must drop over RPUO and RON, so the power consumed is: (VS)2RPUO+RON When both MOSFETs are on, VS must drop over RPUO and 12 RON because the MOSFETs are in parallel, so the power consumed is: (VS)2RPUO+0.5(RON) The maximum power is consumed by the NOR gate in the latter case: 25V(12000.0∥12000.0)+48000.0Ω=0.000463W
(q6) The circuit elements have the following values: Vin=27V, R1=5Ω, R2=7Ω, R3=12Ω, A=6 and B=0.1. please help
we need a genius everyone that finds a genius must bring him here]
Solution for Q2: NM_L = V_IL - V_OL NM_H = V_OH - V_IH ForbiddenRegion = V_IH - V_IL R_PuI = VS * RON/V_OL - RON R_PuA = VS * 2 * RON/V_OL - 2*RON R_PuO = VS * RON/V_OL - RON P_INV = VS^2/(R_PuI+RON) P_AND = VS^2/(R_PuA +2*RON) P_NOR = VS^2/(R_PuO+0.5*RON)
q5 Here, VS=100V, R=1kΩ, and the transistor parameter f=1mAV3. The amplifier is biased with VIN=4V. Vout = 36 Gain = -48
Q No 3 Assuming that I=9A, what is the value of the voltage vo (in Volts)? Now assuming that I=−3A, what is the value of the voltage vo (in Volts)? Finally, for the last two parts assume that I=4A. What is the value of the voltage vo (in Volts)? What is the value of the voltage v1 (in Volts)?
Someone can write the equo of the Q3 of the exam?
Q No 3 I =9amps I=-3 Amps and I=4 Amps
Solution for Q5: Vout=Vs-(f*(Vgs^3))*R Gain = -3*f*(Vgs^2)*R
Vin=42V, R1=4Ω, R2=4Ω, R3=7Ω, A=1.5 and B=0.125 i1 = 2.5 vOUT = 8.4 vTH = 8.4 RTH = 5.6
@EliteTUM, can you post the formula, how calculate Rth?
q(6) vin = 18, r1=1.5 r2=3 r3=4 A=1.5 B=0.5 What are the formulas/answers? thank you in advance
sorry guys, did not calculate Q6, I found the answers here in the forum! Still working on the formulas!
somebody know how to calculate the Rth of Q6? Vin=18V, R1=1.5Ω, R2=3Ω, R3=4Ω, A=1.5 and B=0.5.
aíí joao.. vc conseguiu o 3 e 5?
qual parte vc precisa ai?
as formulas.. eu to só com uma submition em cada um
No Q3 não consigo encontrar para I=2... :c E a formula do Rth no Q6. De resto tenho o teste todo, obrigado.
Q5. VS-iD*R -3*f*((Vin)^2)*R
a Q3 eu tbm não tenho as formulas...
e só falta o Rth da Q6 para eu terminar
viajei mesmo.. na Q5.. Here, VS=90V, R=1kΩ, and the transistor parameter f=1mAV3. The amplifier is biased with VIN=3V. dá uma foça aí?
ok na primeira pergunta ele pede Vout. Vout = Vs - iD*R = 90 - 1m*(3^3)*1k = 63.0
na segunda ele pede o ganho de amplificação. Gain = -3*f*((vin)^2)*R = -3*1m*((3)^2)*1k = -27.0
valeuu.. eu achei uma thread aqui que fala do rth http://openstudy.com/study#/updates/50896d7de4b052419091958e
Vin=45V, R1=1.5Ω, R2=2Ω, R3=6Ω, A=2 and B=0.5 what is the RTH ?
u sure? for what values?
@1431mahi tell us the formula
Vin=45V, R1=1.5Ω, R2=2Ω, R3=6Ω, A=2 and B=0.5.
THANK YOU SO MUCH!! MIDTERM 100%
Screwed up on q3 last part. But got through with 97%. Ask me something. :)
Question 3: When I = 9A ----> Vo = 2 When I = (-3A) ----> Vo = -1 For the next two answers I = 2A Vo = 0.666667 Whats V1?
is that question 3 last bit answer: 1.33
Question 6: Vin=45V, R1=1.5Ω, R2=2Ω, R3=6Ω, A=2 and B=0.5 Whats i1? vout? vth? rth? (rth might be 5 but not sure)
@ 1431mahi thanks for the help on both the questions
pls answer the q 1 for me The elements in this circuit have the following values: R1=200Ω, R2=200Ω, R3=200Ω, V1=3V, I1=2A and I2=2A toooooooo summum
Question 1 Formula vA = (R2*V1 + R3*V1 + I1*R1*R3 - I2*R1*R3)/(R1 + R2 + R3) vB = (R3*(V1 + I1*R1 + I1*R2 - I2*R1 - I2*R2))/(R1 + R2 + R3) P_R1 = (vA-V1)^2/R1 P_R2 = (vA-vB)^2/R2 P_R3 = vB^2/R3 P_V1 = V1 * (V1-vA)/R1 P_I1 = V1 * I1 P_I2 = V1* (-I2)
@Nurali In q1 how to find i1, i2 and i3.. plz help
@Nurali what were ur values... mine are 1000, 400, 600, 6, .002
I need to know the Rth for the attachment draw pleazzzzzzzzzzzzzz