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lunarka Group Title

can anyone help me with H8p3 last question please?

  • 2 years ago
  • 2 years ago

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  1. axi Group Title
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    24

    • 2 years ago
  2. lunarka Group Title
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    i put it, but still didnt get green mark :(

    • 2 years ago
  3. axi Group Title
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    give me d complete ques?

    • 2 years ago
  4. sandeep122443 Group Title
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    can u pls anwer the question before dat i mean last 2nd question

    • 2 years ago
  5. andrew.winney Group Title
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    the one befor t s 45!!

    • 2 years ago
  6. axi Group Title
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    75

    • 2 years ago
  7. Nurali Group Title
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    tell me question

    • 2 years ago
  8. andrew.winney Group Title
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    Now, suppose DIN is high, the drain of Q1 is low, and the gate of Q2 is at VOH. A STORE pulse comes in and turns on Q3. How long must the STORE pulse be on, in picoseconds, to discharge the gate capacitance of Q2 to VIL?

    • 2 years ago
  9. andrew.winney Group Title
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    We assume an "ancient" 1μm technology satisfying the static discipline: VS=5.0V, VOH=3.5V, VIH=3.0V, VIL=0.9V, VOL=0.5V The gate-source capacitance CGS=3.5fF and VT=1.0V. RON=2050.0Ω, ROFF=95.0MΩ and RPU=10.0kΩ. The specifications for this logic family say that we have to refresh this memory every 64ms. So, if we charge the gate capacitance to VOH it will take more than 64ms to decay to VIH.

    • 2 years ago
  10. nickfrei Group Title
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    for 4 use (-ln( (3.5-5) / (0.5-5) ) * (RPU+RON) * 3.5*10^-15) * 10^12

    • 2 years ago
  11. 1431mahi Group Title
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    for 4th (-ln( (3.5-5) / (0.5-5) ) * (RPU+RON) * 3.5*10^-15) * 10^12 for 5th (-ln( (0.9-(5*RON/(RON+RPU))) / (3.5-(5*RON/(RON+RPU))) ) * ((RON|| RPU) + RON) * 3.5*10^-15) * 10^12 got ryt give me best response

    • 2 years ago
  12. namitha_s Group Title
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    @1431mahi: there is a bracket extra in ur ans 4 5th question..

    • 2 years ago
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