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Electrical Engineering: Microelectronics: Assuming a MOSFET circuit is operating in the saturation/active region, if gm = 3.2 mA/V at ID = 120 uA, then what is gm when ID = 820 uA?
 one year ago
 one year ago
Electrical Engineering: Microelectronics: Assuming a MOSFET circuit is operating in the saturation/active region, if gm = 3.2 mA/V at ID = 120 uA, then what is gm when ID = 820 uA?
 one year ago
 one year ago

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In saturation, the current in MOSFET can be described as, \[Id=uCox/2*(VgsVth)^2 *W/L\]. gm is derivative of Id w.r.t Vgs. In this situation , u r using same device for both cases. Hence mobility( u) , Cox , W and L must be same, use relation \[gm=\sqrt{2*u*Cox*W/L*Id}\] to calculate gm when ID=820uA. Can u please tell me what do u mean by active region in MOSFET. This term is mainly used in BJT .
 one year ago
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